Backside thermal patterning of buried oxide (box)

ABSTRACT

The dominant source of thermal resistance for silicon photonic devices patterned on SOI wafers is the buried oxide layer. To ensure efficient thermally driven silicon devices there is a need for a large thermal resistance. This is in contrast to temperature sensitive components need to have low thermal resistance in order to reduce their temperature to ensure good performance. Embodiments comprise etching the back of an SOI wafer to expose the buried oxide layer and depositing an additional layer of silicon oxide to increase the local thermal resistance. Thus, embodiments provide the ability to tailor the thermal resistance across the wafer or die depending on the device being fabricated.

FIELD OF THE INVENTION

Embodiments of the present invention are directed to controlling the thermal resistance of a silicon on insulator (SOI) wafer and, more particularly, to varying the thermal resistance profile at desired spots on the wafer.

BACKGROUND INFORMATION

The dominant source of thermal resistance for silicon photonic devices patterned on silicon on insulator (SOI) wafers is the buried oxide layer. Different devices patterned near each other in the same wafer may have different thermal needs. To ensure efficient thermally driven silicon devices there is a need for a large thermal resistance. This is in contrast to temperature sensitive components, for example lasers, that need to have low thermal resistance in order to reduce their temperature to ensure good performance. The ideal situation would be the ability to tailor the thermal resistance across the wafer or die depending on the device being fabricated.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and a better understanding of the present invention may become apparent from the following detailed description of arrangements and example embodiments and the claims when read in connection with the accompanying drawings, all forming a part of the disclosure of this invention. While the foregoing and following written and illustrated disclosure focuses on disclosing arrangements and example embodiments of the invention, it should be clearly understood that the same is by way of illustration and example only and the invention is not limited thereto.

FIG. 1 is an SOI wafer having a uniform thermal resistance profile;

FIGS. 2A, 2B, and 2C depict an SOI wafer being made to have a tailored thermal resistance profile according to one embodiment;

FIGS. 3A and 3B are thermal images showing surface temperature without and with a thicker local oxide layer, respectively; and

FIG. 4 is a cross sectional scan of the profiles shown in FIGS. 3A and 3B showing the temperature across the device.

DETAILED DESCRIPTION

Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

Referring now to FIG. 1, there is shown a silicon on insulator (SOI) 100 wafer with two devices formed thereon. The SOI wafer 100 includes a single crystalline silicon substrate 102 having an insulating layer 104, such as a buried oxide formed thereon.

As previously noted, many devices may be formed on an SOI wafer 100 and, each of these devices may have very different thermal specifications. As shown in FIG. 1, a low resistance thermal device 106, such as a hybrid laser may be formed on one area of the wafer 100, and adjacent to it may be formed a high thermal resistance device 108, such as a thermally tuned multiplexer (MUX).

For the low thermal resistance device 106 (e.g. the laser), the thinnest buried oxide that may be used without incurring additional loss due to leakage into the substrate is typically 1 um thick for silicon waveguides of 1.5 um dimensions. In contrast, for the high thermal resistant device 108 (e.g. thermally tuned MUX), a lurn thick buried oxide layer may not be thick enough to fabricate an efficient device.

Referring to FIGS. 2A-2C, embodiments of the invention are directed to controlling the thermal resistance of a silicon on insulator (SOI) wafer by patterning the backside of the buried oxide (BOX) layer.

As shown in FIG. 2A, a low resistance thermal device 106, such as a hybrid laser may be formed on one area of the wafer 100 over the oxide layer 104 and adjacent to a high thermal resistance device 108, such as a thermally tuned multiplexer (MUX).

An opening 200 may be created from the backside of the wafer, such as by etching the back of an SOI wafer 100 to expose the buried oxide layer 104. According to embodiments, the present invention enables the ability to tailor the thermal resistance across the wafer or die depending on the device being fabricated. In this case, the opening 200 is positioned under the high thermal resistance device 108. For example, the additional oxide 202 may be 8 um thick and 20 um wide to accommodate this particular thermally tuned MUX 108. Of course other thicknesses and dimensions could be used as appropriate. For example, the additional oxide layer may be 2-10 um thick.

As shown in FIG. 2B, an additional layer of silicon oxide 202 is deposited in the opening 200, thus increasing the local thickness of the oxide layer 104 and thus increasing the local thermal resistance in the area under the high thermal resistance device 108.

As show in FIG. 2C, an amorphous silicon layer 204 is deposited to fill the remainder of the opening 200 shown in FIG. 2B. This amorphous silicon layer may be used to retain the mechanical viability of the wafer 100. The amorphous silicon may then be polished or planarized flush with the bottom of the wafer 100.

FIGS. 3A and 3B show the calculated temperature distribution when 25 mW of electrical power is dissipated in a heater placed 2 um above a waveguide for the case when the oxide layer 104 is 1 um thick (FIG. 3A) and when it is 8 um thick including the additional oxide 202 (FIG. 3B). As illustrated, temperatures are warmer with the additional oxide.

This is also shown in FIG. 4, where it can be seen that backside patterning according to embodiments has raised the temperature of the waveguide from 294 k to 296.2 k. This corresponds to a decrease in the power required to produce a pi phase shift via the thermo-optic effect from 98 mW to 31 mW.

In one embodiment of the invention it may be used is in the fabrication of a multi-channel laser system. The SOI wafer may be optimized to reduce the thermal resistance of the lasers on the chip, and backside patterning would be done behind the multiplexer for efficient tuning of this device.

The above description of illustrated embodiments of the invention, including what is described in the Abstract, is not intended to be exhaustive or to limit the invention to the precise forms disclosed. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize.

These modifications can be made to the invention in light of the above detailed description. The terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification and the claims. Rather, the scope of the invention is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation. 

What is claimed is:
 1. An apparatus comprising: a silicon on insulation (SOI) wafer comprising a silicon substrate and a buried oxide layer; at least one opening in a backside of the SOI wafer through the silicon substrate to expose the buried oxide layer; an addition layer of oxide deposited in the opening beneath the buried oxide layer; and a layer of silicon filling the remainder of the opening and being flush with the backside of the silicon substrate, wherein the additional layer of oxide provides a different thermal resistance for the wafer in that area.
 2. The apparatus as recited in claim 1, further comprising: a plurality of devices are formed on the SOI wafer having different thermal resistance specifications.
 3. The apparatus as recited in claim 2 wherein one of the plurality of devices comprises a low thermal resistance device.
 4. The apparatus as recited in claim 3 wherein one of the plurality of devices comprises a high thermal resistance device.
 5. The apparatus as recited in claim 4 wherein the additional oxide layer is 2-10 um thick.
 6. The apparatus as recited in claim 1 wherein the layer of silicon filling the remainder of the opening is amorphous silicon.
 7. The apparatus as recited in claim 2 wherein the plurality of devices comprises at least a laser and a thermally tuned device.
 8. A method, comprising: providing a silicon on insulator (SOI) wafer including a silicon substrate with an buried oxide layer; etching an opening from a backside of the SIO wafer to expose and underside of the buried oxide layer; depositing an addition layer of oxide under the buried oxide layer to effectively increase the local area thickness of the buried oxide layer to increase the local area thermal resistance of the SOI wafer; and filling the remainder of the opening with silicon.
 9. The method as recited in claim 8, wherein the filling the remainder of the opening with silicon comprises filling the opening with amorphous silicon.
 10. The method as recited in claim 8, further comprising: positioning devices on the SOI wafer having different thermal resistance specifications.
 11. The method as recited in claim 8, further comprising: positioning a high thermal resistance device over the local area; and positioning low thermal resistance devices over other areas.
 12. The method as recited in claim 8, wherein the buried oxide layer is about 1 um thick.
 13. The method as recited in claim 12 wherein the additional layer of oxide is 2-10 um thick.
 14. A silicon on insulation (SOI) wafer having a tailored thermal resistance profile, comprising: a silicon substrate having a buried oxide layer, local areas on the backside of the silicon substrate where the silicon has been removed to expose the buried oxide layer; additional layers of oxide to increase the effective thickness of the buried oxide layer in the local areas, the thickness of the additional layers of oxide chosen to tailor the local area thermal profile.
 15. The silicon on insulation (SOI) wafer as recited in claim 14 further comprising: a layer of silicon filling the remainder of the local areas and being flush with the backside of the silicon substrate.
 16. The silicon on insulation (SOI) wafer as recited in claim 15 wherein the layer of silicon comprises amorphous silicon.
 17. The silicon on insulation (SOI) wafer as recited in claim 14 wherein the additional layers of oxide is 2-10 um thick.
 18. The silicon on insulation (SOD wafer as recited in claim 17 wherein high thermal resistance devices are positioned over the local areas.
 19. The silicon on insulation (SOI) wafer as recited in claim 14 wherein high thermal resistance devices comprise thermally tuned devices. 